X-ray study of amorphous phase of BaSi2 under high-pressure

T.Nishii, T.Mizuno, Y.Mori, K.Takarabe, M.Imai, and S.Kohara

BaSi2 high-pressure amorphous
A high-pressure synchrotron X-ray diffraction study of zintl phase BaSi2 semiconductor has been performed up to 45 GPa. The pressure-induced amorphization occurred at 13 GPa. In the amorphous phase, the Ba-Si bond distance decreased with increasing pressure, while the Ba-Si bond distances were almost unchanged. The Rietveld refinement revealed that these distances in the crystal phase decreased with increasing pressure.
By combining these results, the Ba-Si bond compressibility in both phases is almost identical.

phys. stat. sol. (b)

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