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| 基本情報 |
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| 氏名 |
稲垣 祐次 |
| 氏名（カナ） |
ｲﾅｶﾞｷ ﾕｳｼﾞ |
| 氏名（英語） |
Inagaki Yuji |
| 所属 |
機構 教育推進機構 基盤教育ｾﾝﾀｰ |
| 職名 |
准教授 |
| researchmap研究者コード |
6000013935 |
| researchmap機関 |
岡山理科大学 |
Correlation between ferromagnetism and dopant 3 d metal-oxygen hybridized state lying at the bottom of conduction band in ZnO-based diluted magnetic semiconductor system
Takuto Tsukahara, Satoshi An, Sho Otsuru, Yasuhisa Tezuka2, Shunsuke Nozawa, Junichi Adachi, Kenta Akashi, Yuji Inagaki, Tatsuya Kawae, Hirofumi Ishii, Yen-Fa Liao, Tetsuya Kida, Satoshi Suehiro, Masashi Nantoh, Koji Ishibashi and Yoichi Ishiwata
We systematically investigate the unoccupied electronic states, crystal structure, and magnetism of V- and Mn-doped ZnO nanocrystals (NCs). Post-annealing treatment at 300 C converts diamagnetic V5þ into magnetic high-spin V3þ ions, which leads to room-temperature ferromagnetism for the V-doped NCs. In contrast, ferromagnetism does not occur for the Mn-doped NCs. Oxygen 1s x-ray absorption spectroscopy reveals that the unoccupied metal-oxygen hybridized state lies near the bottom of the conduction band for the V-doped NCs but lies far above it for the Mn-doped NCs. Therefore, the ferromagnetism in a ZnO-based diluted magnetic semiconductor system can be understood within the framework of the n-type carrier-mediated ferromagnetism model.
Journal of Applied Physics
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