Thin films of Gd were grown on a glass substrate with a sputtering technique. Measurements of x‐ray diffraction, magnetization, and electrical resistance were carried out for different samples that were annealed at various temperatures after the deposition. The depositedfilms are polycrystalline of hcp structure with preferred orientation, with the (100) plane parallel to the sample surface. The estimated Curie temperatureT C of these films changes between 273 and 293 K, depending on the annealingtemperature. It is found that this variation of T C is correlated with the relaxation of lattice imperfections.
Annealing temperature dependence of Tc of thin-films Gd grown on a glass substrate.
