|
|
|
| 基本情報 |
|
| 氏名 |
中村 修 |
| 氏名（カナ） |
ﾅｶﾑﾗ ｵｻﾑ |
| 氏名（英語） |
Nakamura Osamu |
| 所属 |
機構 研究社会連携機構 研究社会連携ｾﾝﾀｰ |
| 職名 |
教授 |
| researchmap研究者コード |
B000300963 |
| researchmap機関 |
岡山理科大学 |
Negative Magnetoresistance Generated by Combination of Spin Orbit Interaction and Applied Magnetic Field
M.Sakai1, D.Kodama, T.Sakuraba1, Z.Honda,S.Hasegawa, A.Kitajima, A.Oshima2, K.Higuchi, and O.Nakamura
We have theoretically studied a negative magnetoresistance (MR) the mechanism of which is completely different from conventional mechanisms, i.e., spin-related mobility-increased mechanisms and orbital-motion-related mechanisms including a quantum interference effect. Our proposed negative MR is caused by the interplay between a spin–orbit interaction (SOI) and the Lorentz force due to an externally applied magnetic field. We have phenomenologically approached this mechanism using the Drude-like model, in which the carrier scattering by SOI is considered as a transverse scattering term in addition to the longitudinal scattering term due to usual collisions and the Lorentz force term. Also, the possibility of observing our proposed negative MR was discussed by comparing our prediction with experimental results for Ni and Gd films, which were newly measured in this study.
Negative Magnetoresistance Generated by Combination of Spin Orbit Interaction and Applied Magnetic Field
Japanese Journal of Applied Physics
|
