論文

基本情報

氏名 中村 修
氏名(カナ) ナカムラ オサム
氏名(英語) Nakamura Osamu
所属 機構 研究社会連携機構 研究社会連携センター
職名 教授
researchmap研究者コード B000300963
researchmap機関 岡山理科大学

題名

Spin-charge-coupled transverse resistance in an ambipolar conductor YH2-based Hall-bar structure with perpendicularly magnetized current-injection electrodes

単著・共著の別

共著

著者

Kaname Sato, Yutaro Takahashi, Shujiro Akisato, Ryota Mikami, Nao Suganuma, Yugo Ashizawa, Hayate Kawaguchi, Yoshikata Nakajima, Tomofumi Ukai, Yasuhiko Fuji, Tatsuro Hanajiri, Junya Kaneko, Osamu Nakamura, Pham Van Thach, Hiroyuki Awano, Shigehiko Hasegawa and Masamichi Sakai

概要

This study addressed Hall effect measurements in the nonstoichiometric α-phase ytterbium dihydride (α-YbH2±δ) and β-phase ytterbium trihydride (β-YbH3−δ) films. We have prepared orthorhombic α-YbH2.05 and cubic β-YbH2.7 polycrystalline films using hydrogenation of precursor Yb films formed in a molecular-beam process. The observed positive Hall coefficients indicate p-type conduction in α-YbH2.05 and β-YbH2.7. Experimental results in the orthorhombic α-phase suggest a conduction-type change depending on compositions around the stoichiometric composition of YbH2. Possible conduction mechanisms in these nonstoichiometric ytterbium hydrides are discussed from the viewpoint of modulation of electronic structures by hydrogen vacancies.

発表雑誌等の名称

出版者

98

4

開始ページ

終了ページ

発行又は発表の年月

2023/03

査読の有無

有り

招待の有無

無し

記述言語

英語

掲載種別

研究論文(学術雑誌)

ISSN

ID:DOI

10.1088/1402-4896/acc4f2

ID:NAID(CiNiiのID)

ID:PMID

URL

JGlobalID

arXiv ID

ORCIDのPut Code

DBLP ID