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基本情報 |
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氏名 |
中村 修 |
氏名(カナ) |
ナカムラ オサム |
氏名(英語) |
Nakamura Osamu |
所属 |
機構 研究社会連携機構 研究社会連携センター |
職名 |
教授 |
researchmap研究者コード |
B000300963 |
researchmap機関 |
岡山理科大学 |
Appearance of a correlation between the Hall coefficient and resistivity upon dihydrogenation of yttrium
M.Sakai, D.Kodama, S.Ito, M.Ito, O.Nakamura, S.Hasegawa, A. Kitajima, A.Oshima
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To shed light on the correlation between the Hall coefficient (RH) and electrical resistivity(ρ), we performed simultaneous measurements of these two transport coefficients in fcc dihydride phase of yttrium(YHx), having H/Y values ranging from 1.73 to 2.04. Unlike the typical behavior of metals, an approximately linear relationship was observed between RH and ρ at room temperature after dihydrogenation of yttrium. Interpretation of this relationship, based on the Boltzmann–Bloch scheme, reveals that the transverse (cyclotron) relaxation rate (1/τc) of the carriers is relatively insensitive to the generation of hydrogen defects in the dihydride phase of yttrium, unlike the longitudinal relaxation rate (1/τ), which is affected by the presence of hydrogen defect. Low-temperature (77 K) measurements of RH and ρ on the same samples show that the approximately linear relationship observed at room temperature disappears but a certain nonlinear relationship may exist at 77 K.
Appearance of a correlation between the Hall coefficient and resistivity upon dihydrogenation of yttrium
Journal of Applied Physics
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